| Place of Origin: | SUZHOU |
|---|---|
| Brand Name: | PHOENIX |
| Certification: | ANSI/ESDA/JEDEC JS-001 |
| Model Number: | CERAMIC3030 |
| Minimum Order Quantity: | 5000PCS |
| Price: | Negotiation |
| Packaging Details: | 4000PCS /ROLL |
| Delivery Time: | 7-10 DAYS |
| Payment Terms: | Western Union, MoneyGram, T/T |
| Supply Ability: | 4000K PER MONTH |
| Name: | SMD LED CERAMIC3030 RED | λd: | 620-632nm |
|---|---|---|---|
| Power: | 0.67W | Nput Voltage(V): | 2v |
| Luminous Flux(lm): | 70-100lm | Warranty(Year): | 2 Years |
| Working Time (hours): | 20000 | Operating Temperature(℃): | -40-85 |
| High Light: | Ceramic SMD LED Chip,100lm SMD LED Chip,3030 micro led chip |
||
2V 350MA 0.67W CERAMIC3030 70-100LM 620-632NM SMD LED CHIP FOR Medical Illumination Photo Therapy
Maximum Ratings
Parameter Symbol Values
| Operating Temperature |
Top |
min. max. |
-40 °C 125 °C |
| Storage Temperature |
Tstg |
min. max. |
-40 °C 125 °C |
| Junction Temperature | T | max. | 135 °C |
| Forward current | I |
min. max. |
100 mA 1000 mA |
|
Surge Current t ≤ 10 µs; D = 0.005 ; TJ = 25 °C |
FS | max. | 1500 mA |
| Reverse voltage 2) | V | Not designed for reverse operation | |
|
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) |
ESD | 8 kV |
Characteristics
I = 700 mA; TJ = 25 °C
Parameter Symbol Values
| Peak Wavelength | λpeak typ. 6340 nm |
|
Centroid Wavelength 3) I = 350 mA |
λdom min. 620 nm typ. 623 nm max. 632 nm |
|
|
|
| Spectral Bandwidth at rel,max | ∆λ typ. 16 nm |
| Viewing angle at 50% IV | 2φ typ. 80 ° |
|
Forward Voltage 4) I = 350 mA |
1.8V 2.00V 2.30V |
| Reverse current 2) | Not designed for reverse operation |
| Electrical thermal resistance junction/solderpoint with efficiency ηe = 74 % | RthJS elec. typ. 2.5 K / W |
Forward Voltage Groups
Group Forward Voltage 4)
I = 350 mA
| 70 lm | 75 lm |
|
75 lm |
82 lm |
| 82 lm | 90 lm |
| 90 lm | 100 lm |
Centroid
Group
Centroid Wavelength 3)
I = 350 mA
λcentroid
| 620NM | 632NM |
Relative Spectral Emission
Irel = f (λ); IF = 350 mA; TJ = 25 °C
Radiation Characteristics
Irel = f (ϕ); TJ = 25 °C
Dimensional Drawing
Further Information:
Approximate Weight: 28.0 mg
Package marking: Anode
Corrosion test:Class: 3BTest condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
|
Ramp-up rate to preheat*) 2 25 °C to 150 °C |
3 | K/s |
|
tS 60 100 T to T |
120 | s |
|
Ramp-up rate to peak*) T to T 2 |
3 | K/s |
| Liquidus temperature TL 217 | °C | |
| Time above liquidus temperature tL 80 | 100 | s |
| Peak temperature T 245 | 260 | °C |
|
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K |
30 | s |
|
Ramp-down rate* 3 T to 100 °C |
6 | K/s |
|
Time 25 °C to TP |
480 | s |
All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
